نوع مقاله : مقاله کنفرانسی
نویسندگان
1 دانشکده فیزیک، دانشگاه اصفهان، اصفهان، ایران
2 پژوهشکده مواد و انرژی، پژوهشگاه فضایی ایران، وزارت ارتباطات و فناوری اطلاعات، اصفهان، ایران
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper, the effect of gamma radiation on the properties of bipolar and MOSFET transistors and ordinary Schottky diodes for dosimetry is investigated and compared. For gamma irradiation, a Gamasel device containing 60 cobalt springs with an activity of 5770 curries located in the Atomic Energy Organization of Tehran was used. Experiments were performed to irradiate parts under doses of 2, 4, 8, 16 and 32 kg. The results showed that gamma radiation in this dose range significantly affects the parameters of electronic components. The dose change curve relative to the flow is linear. Individual dosimeters can be divided into active and inactive categories. Individual passive dosimeters use detectors that are capable of storing recorded data for a long time. Nuclear and germline solid state detectors are the most important options used, passive dosimeters . With the growth and development of semiconductor materials technology, especially silicon, silicon-based individual active gamma dosimeters have been well developed and they have been used instead of inactive gamma film films. Transistors and silicon diodes are the best tools for use as detectors in the individual gamma active dosimeter due to their small volume, low weight, low operating voltage, good energy resolution, simple operation and ease of transport .
کلیدواژهها [English]
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