عنوان مقاله [English]
نویسندگان [English]چکیده [English]
Porous silicon (PS) samples are obtained by electrochemical anodization of Si wafers in HF+DMF solution. The hydrogen complex components are formed on the inner surface walls of porous silicon. In this work the depth profile of porous silicon is estimated by measurement of hydrogen content in the depth of the sample. Since the well-known ion beam analysis simulation programs are inappropriate for simulating porous materials, a Monte-Carlo simulation program is developed to obtain the most consistent depth profiles with the experimental ones. Hydrogen content in the depth of the sample is considered to be proportional to the porosity of the sample. The results indicate that the maximum porosity of the sample is 90% for 69-139 nm depth of the sample.