Design and construction of dose-measuring device using MOSFET transistors based on threshold voltage shift

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Abstract

One of the most important issues in radiation facilities and space missions is determining the dose of ionizing particles in the radiation environment. MOSFET dosimeters are among the tools for measuring doses in these environments, which in addition to very high sensitivity to radiation, can also withstand high flux of particles. These tools also have a small volume, low power consumption and high reliability. The purpose of this work is the design and construction of a MOSFET radiation dosimeter system based on the threshold voltage shifts. Radiation calibration of this system has been performed by irradiating MOSFETs in different doses (from 5 to 100 Gy) in the secondary standard center (SSDL) in Karaj. The temperature dependence of these transistors is also considered in all measurements according to the coefficient of temperature change. The results showed that the response of these MOSFETs to different radiation doses is almost linear and has a sensitivity of about 1 to 6 mV/Gy and depending on the radiation environment and the required dimensions of these MOSFETs, different types can be used.

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