Monte Carlo Simulation of Radiation effects in protection layers of logical cell of the digital gate in ‎the FPGA for electron and proton rays Using the FLUKA Code

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Abstract

In this paper, radiation effects in protection layers of logical cell of the digital gate in the FPGA for electron and proton rays was simulated Using the FLUKA Code. by using of the Monte Carlo simulation, the electron and proton transport into the logical cell of the digital gate in the FPGA will be studied. In this simulation, the maximum energy of the electrons and protons at the entrance of logic cell have been chosen between 30 to 50 MeV and the degradation effects of these rays on semiconductor material, their effects on five different layer configurations such as layer of aluminum, silicon, silicon dioxide, boron dioxide and boron will be studied. The simulation result shows that using the multi-layer of silicon dioxide relatives to the other cases leads to reduction of degradation effects on semi-conductor sensitive volume.
 

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