Response optimization of neutron dosimetry in thermal and fast energy range for a diode detector

Authors

10.22052/2.2.1

Abstract

During the last few years, real time gamma and neutron dosimeters have been developed and semiconductor diodes are frequently used in these dosimeters. Semiconductor diodes are used to charged particle detection. For sensitizing the detector to neutrons, a converter layer is contacted on the front surfaces of them. Incident neutrons interact with the converter and produce charged particles that can deposit their energy in the detectors and produce a signal. To cover the energy range of thermal and fast neutrons, a silicon diode detector with thermal neutron converters (6LiF) and fast neutron converter (polyethylene) have been used. Response of the diode detector to neutron radiation is depending on the neutron converter and varying of the neutron converter characteristics is performed for achieving dosimetry in the different energies. To achieve proper dosimetry response in a wide range of energy response 0.01 eV-15 MeV, the optimum thickness of the thermal and fast neutron converter is determined 4 micron and one millimeter respectively. The results show that the dosimetry response in the different neutron energies, to some extent was appropriate, and the deviation is acceptable in the wide range of energy

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References

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