Volume 8, Issue 6 (Iranian Journal of Radiation Safety and Measurement 2020)                   IJRSM 2020, 8(6): 43-52 | Back to browse issues page

XML Persian Abstract Print

Download citation:
BibTeX | RIS | EndNote | Medlars | ProCite | Reference Manager | RefWorks
Send citation to:

Tohidi T, Rahmatallahpur S. Study of gamma irradiation effect on electrical properties of MOSFET and MOS diode for application in dosimetry. IJRSM 2020; 8 (6) :43-52
URL: http://rsm.kashanu.ac.ir/article-1-549-en.html
Northwest Research Complex (Bonab)
Abstract:   (1133 Views)
In this work, the effect of the gamma radiation on the threshold voltage of metal oxide field effect transistor (MOSFET) was investigated. First, the purchased P typeMOS transistor was considered. Due to a nonlinear response to the administrated dose, the different regions were analyzed. Then we constructed an Al/n-Si/SiO2/Al MOS diode. These diodes were irradiated to mili to kilo Gray dose and their electrical behavior were investigated. In forward bias, the current variation was low but in reverse bias and lower than -20 volt, the current variation was large and measurable. A non-constant responsivity was obtained for diodes which is due to the non linearity of dose - current curve. Three different regions were chosen and the responsivity in these regions was obtained
Full-Text [PDF 619 kb]   (347 Downloads)    
Type of Study: Research | Subject: Special

Send email to the article author

Rights and permissions
Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

© 2022 CC BY-NC 4.0 | Iranian Journal of Radiation Safety and Measurement

Designed & Developed by : Yektaweb