Journal of Radiation Safety and Measurement

Journal of Radiation Safety and Measurement

An investigation of the effect of Gamma irradiation on the electrical properties of transistors and silicon diodes for application in high dose dosimetry

Document Type : Conference Paper

Authors
Zahra Daram 1
Babak Shirani Bidabadi 1
Saeed Golshah 2
1 Faculty of Physics, University of Isfahan, Isfahan, Iran
2 Materials and Energy Research Institute, Iran Space Research Institute, Ministry of Communications and Information Technology, Isfahan, Iran
Abstract
In this paper, the effect of gamma radiation on the properties of bipolar and MOSFET transistors and ordinary Schottky diodes for dosimetry is investigated and compared. For gamma irradiation, a Gamasel device containing 60 cobalt springs with an activity of 5770 curries located in the Atomic Energy Organization of Tehran was used. Experiments were performed to irradiate parts under doses of 2, 4, 8, 16 and 32 kg. The results showed that gamma radiation in this dose range significantly affects the parameters of electronic components. The dose change curve relative to the flow is linear. Individual dosimeters can be divided into active and inactive categories. Individual passive dosimeters use detectors that are capable of storing recorded data for a long time. Nuclear and germline solid state detectors are the most important options used, passive dosimeters . With the growth and development of semiconductor materials technology, especially silicon, silicon-based individual active gamma dosimeters have been well developed and they have been used instead of inactive gamma film films. Transistors and silicon diodes are the best tools for use as detectors in the individual gamma active dosimeter due to their small volume, low weight, low operating voltage, good energy resolution, simple operation and ease of transport .
Keywords
Radiation Damage
Dosimetry
Gamma radiation
cobalt 60 source
sensitivity dosimeter
  1. S. A. Durrani, R. K. Bull. Solid State Nuclear Track Detection Principles Methods and Applications. Pergamon Press, UK, 1987.
  2. H. Zaki Dizaji, M. Shahriari, G. R. Etaati. Monte Carlo Calculation of CR-39 efficiency for fast neutron detection using a combination of MCNP and SRIM codes, and comparison with experimental results. Radiat. Meas. 42 (2007) 1332-1334.
  3. G. F. Knoll. Radiotion Detection and Measurement. John Wiley Press, New York, 1989.
  4. T. Nunomiya, S. Abe, K. Aoyama, T. Nakamura. Development of advanced-type multi-functional electronic personal dosemeter. Radiat. Prot. Dosim. 126 (2007) 284-287.
  5. M. Wielunski, R. Schutz, E. Fantuzzi, A. Pagnamenta, W. Wahl, J. Palfalvi, P. Zombori, A. Andrasi, H. Stadtmann, Ch. Schmitzer. Study of the sensitivity of neutron sensors consisting of a converter plus Si charged-particle detector. Nucl. Instr. Meth. A 517 (2004) 240-253.
  6. A. M. H. Abaza. New trend in radiation dosimeters. Amer. J. Modern Phys. 7 (2018) 21-30.
  7. J. Ma, J. T. W. Yeowa, J. C. L. Chow, R. B. Barnett. A carbon fiber-based radiation sensor for dosimetric measurement in radiotherapy. Carbon 46 (2008) 1869-1873.
  8. V. S. S. Srinivasan, A. Pandya. Feasibility study of thin film Al/SnOx/n-Si gate stack for gamma radiation dosimetry. Radiat. Measurements 44 (2009) 325–327.
  9. H. N. Raval, S. P. Tiwari, R. R. Navan, V.R. Rao. Determining ionizing radiation using sensors based on organic semiconducting material. Appl. Phys. Letters 94 (12) (2009) 123304.
  10. I. S. Kwan, A. B. Rosenfeld, Z. Y. Qi, D. Wilkinson, M. L. F. Lerch, D. L. Cutajar, M. Safavi-Naeni, M. Butson, J. A. Bucci, Y. Chin, V. L. Perevertaylo. Skin dosimetry with new MOSFET detectors. Radiat. Measurements 43 (2008) 929-932.
  11. V. S. S. Srinivasan, A. Pandya. Dosimetry aspects of hafnium oxide metal-oxide semiconductor (MOS) capacitor. Thin Solid Films 520 (2011) 574-577.
  12. T. R. Oldham. Total ionizing dose effect in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50 (3) (2003) 483-499.