Volume 9, Issue 1 (Iranian Journal of Radiation Safety and Measurement 2021)                   IJRSM 2021, 9(1): 55-64 | Back to browse issues page

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Boorboor S, Jafari H. Design and construction of dose-measuring device using MOSFET transistors based on threshold voltage shift. IJRSM. 2021; 9 (1) :55-64
URL: http://rsm.kashanu.ac.ir/article-1-582-en.html
Shahid Beheshti University
Abstract:   (313 Views)
One of the most important issues in radiation facilities and space missions is determining the dose of ionizing particles in the radiation environment. MOSFET dosimeters are among the tools for measuring doses in these environments, which in addition to very high sensitivity to radiation, can also withstand high flux of particles. These tools also have a small volume, low power consumption and high reliability. The purpose of this work is the design and construction of a MOSFET radiation dosimeter system based on the threshold voltage shifts. Radiation calibration of this system has been performed by irradiating MOSFETs in different doses (from 5 to 100 Gy) in the secondary standard center (SSDL) in Karaj. The temperature dependence of these transistors is also considered in all measurements according to the coefficient of temperature change. The results showed that the response of these MOSFETs to different radiation doses is almost linear and has a sensitivity of about 1 to 6 mV/Gy and depending on the radiation environment and the required dimensions of these MOSFETs, different types can be used.
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Type of Study: Research | Subject: Special

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